| PART |
Description |
Maker |
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0 |
From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory
|
Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K9WAG08U1A-I K9WAG08U1A-Y K9NBG08U5A K9NBG08U5A-P |
2G X 8 FLASH 2.7V PROM, 20 ns, PDSO48
4G X 8 FLASH 2.7V PROM, 30 ns, PDSO48 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48
1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
|
SEMIKRON
http://
Samsung semiconductor
|
| MT29F4G08ABBEAH4 MT29F4G16ABBEAH4 MT29F4G08ABAEAH4 |
NAND Flash Memory
|
Micron
|
| 29F32G08C |
NAND Flash Memory
|
Micron
|
| MT29F1G16ABCHC MT29F1G08ABCH4 |
NAND Flash Memory
|
Micron Technology
|
| K9F6408U0B K9F6408U0B-TCB0 K9F6408U0B-TIB0 |
8M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MT29F2G16ABBEAH4 MT29F2G08ABBEAHC MT29F2G08ABAEAH4 |
2Gb NAND Flash Memory
|
Micron
|
| MT29F32G08CBABA MT29F128G08CJABB MT29F128G08CABA M |
(MT29Fxxxxxxxx) NAND Flash Memory
|
Micron
|
| KM29V64001T |
8M X 8 BIT NAND FLASH MEMORY
|
Samsung semiconductor
|
